Carbonaceous field effect transistor with graphene and diamondlike carbon

Diamond and Related Materials

Volumn 22, Issue , 2012, Pages 118-123

  Takabayashi, Susumu ^a,b   Ogawa, Shuichi ^a   Takakuwa, Yuji ^a   Kang, Hyun Chul ^a   Takahashi, Ryota ^a   Fukidome, Hirokazu ^a,b   Suemitsu, Maki ^a,b   Suemitsu, Tetsuya ^a,b   Otsuji, Taiichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Diamondlike carbon (DLC); Field effect transistor (FET); Graphene; Photoemission assisted plasma enhanced chemical vapor deposition (PA CVD)

Indexed keywords

AMBIPOLAR CHARACTERISTICS; DIAMOND-LIKE CARBON; DLC FILM; ELECTRICAL CHARACTERISTIC; FIELD EFFECT TRANSISTOR (FET); GATE LENGTH; GATE THICKNESS; HOLE-DOPING; MAXIMUM TRANSCONDUCTANCE; N-CHANNEL; NEUTRAL POINTS; PER UNIT; POSITIVE SHIFT; RAMAN ANALYSIS; TOP-GATE;

CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; GATE DIELECTRICS; GRAPHENE; PHOTOEMISSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING;

FIELD EFFECT TRANSISTORS;

EID: 84856007244     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.12.037     Document Type: Article

References (44)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov Science 306 2004 666 669
2. S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, D.C. Elias, J.A. Jaszczak, and A.K. Geim Phys. Rev. Lett. 100 2008 016602
3. K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H.L. Stormer Solid State Commun. 146 2008 351 355
4. M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D.K. Maude, A.L. Barra, M. Sprinkle, C. Berger, W.A. de Heer, and M. Potemski Phys. Rev. Lett. 101 2008 267601
5. F. Schwierz Nat. Nanotechnol. 5 2010 487 496
6. Y.M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.Y. Chiu, A. Grill, and P. Avouris Science 327 2010 662
7. L. Liao, Y.C. Lin, M.Q. Bao, R. Cheng, J.W. Bai, Y.A. Liu, Y.Q. Qu, K.L. Wang, Y. Huang, and X.F. Duan Nature 467 2010 305 308
8. Y.Q. Wu, Y.M. Lin, A.A. Bol, K.A. Jenkins, F.N. Xia, D.B. Farmer, Y. Zhu, and P. Avouris Nature 472 2011 74 78
9. M.C. Lemme, T.J. Echtermeyer, M. Baus, and H. Kurz IEEE Electron Device Lett. 28 2007 282 284
10. M.C. Lemme, T.J. Echtermeyer, M. Baus, B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, and H. Kurz Solid-State Electron. 52 2008 514 518
11. Y.M. Lin, K.A. Jenkins, A. Valdes-Garcia, J.P. Small, D.B. Farmer, and P. Avouris Nano Lett. 9 2009 422 426
12. A. Pirkle, R.M. Wallace, and L. Colombo Appl. Phys. Lett. 95 2009 133106
13. B. Fallahazad, S. Kim, L. Colombo, and E. Tutuc Appl. Phys. Lett. 97 2010 123105
14. I. Meric, C.R. Dean, A.F. Young, N. Baklitskaya, N.J. Tremblay, C. Nuckolls, P. Kim, and K.L. Shepard Nano Lett. 11 2011 1093 1097
15. G. Gu, S. Nie, R.M. Feenstra, R.P. Devaty, W.J. Choyke, W.K. Chan, and M.G. Kane Appl. Phys. Lett. 90 2007 253507
16. J. Kedzierski, P.L. Hsu, P. Healey, P.W. Wyatt, C.L. Keast, M. Sprinkle, C. Berger, and W.A. de Heer IEEE Trans. Electron Devices 55 2008 2078 2085
17. Y.Q. Wu, P.D. Ye, M.A. Capano, Y. Xuan, Y. Sui, M. Qi, J.A. Cooper, T. Shen, D. Pandey, G. Prakash, and R. Reifenberger Appl. Phys. Lett. 92 2008 092102
18. J.S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P.M. Campbell, G. Jernigan, J.L. Tedesco, B. VanMil, R. Myers-Ward, C.J. Eddy, and D.K. Gaskill IEEE Electron Device Lett. 30 2009 650 652
19. J.S. Moon, D. Curtis, S. Bui, M. Hu, D.K. Gaskill, J.L. Tedesco, P. Asbeck, G.G. Jernigan, B.L. VanMil, R.L. Myers-Ward, C.R. Eddy, P.M. Campbell, and X. Weng IEEE Electron Device Lett. 31 2010 260 262
20. X.B. Li, X.S. Wu, M. Sprinkle, F. Ming, M. Ruan, Y.K. Hu, C. Berger, and W.A. de Heer Phys. Status Solidi A 207 2010 286 290
21. O.M. Nayfeh, T. Marr, and M. Dubey IEEE Electron Device Lett. 32 2011 473 475
22. S. Aisenberg, and R. Chabot J. Appl. Phys. 42 1971 2953 2958
23. J. Robertson Mater. Sci. Eng. R 37 2002 129 281
24. M. Massi, H.S. Maciel, C. Otani, R.D. Mansano, and P. Verdonck J. Mater. Sci. Mater. Electron. 12 2001 343 346
25. S. Takabayashi, K. Okamoto, K. Shimada, K. Motomitsu, H. Motoyama, T. Nakatani, H. Sakaue, H. Suzuki, and T. Takahagi Jpn. J. Appl. Phys. 47 2008 3376 3379
26. S. Takabayashi, K. Okamoto, H. Sakaue, T. Takahagi, K. Shimada, and T. Nakatani J. Appl. Phys. 104 2008 043512
27. J. Szmidt, R.B. Beck, S. Mitura, and A. Sokolowska Diamond Relat. Mater. 3 1994 853 857
28. N. Konofaos, and C.B. Thomas J. Appl. Phys. 81 1997 6238 6245
29. C. Berger, Z.M. Song, T.B. Li, X.B. Li, A.Y. Ogbazghi, R. Feng, Z.T. Dai, A.N. Marchenkov, E.H. Conrad, P.N. First, and W.A. de Heer J. Phys. Chem. B 108 2004 19912 19916
30. W.A. de Heer, C. Berger, X.S. Wu, P.N. First, E.H. Conrad, X.B. Li, T.B. Li, M. Sprinkle, J. Hass, M.L. Sadowski, M. Potemski, and G. Martinez Solid State Commun. 143 2007 92 100
31. A. Dinger, C. Lutterloh, J. Biener, and J. Küppers Surf. Sci. 421 1999 17 26
32. G. Gupta, D.A. Slanac, P. Kumar, J.D. Wiggins-Camacho, J. Kim, R. Ryoo, K.J. Stevenson, and K.P. Johnston J. Phys. Chem. C 114 2010 10796 10805
33. T. Takami, S. Ogawa, H. Sumi, T. Kaga, A. Saikubo, E. Ikenaga, M. Sato, M. Nihei, and Y. Takakuwa Surf. Sci. Nanotech. 7 2009 882 890
34. H. Sumi, S. Ogawa, M. Sato, A. Saikubo, E. Ikenaga, M. Nihei, and Y. Takakuwa Jpn. J. Appl. Phys. 49 2010 076201
35. M. Ishigami, J.H. Chen, W.G. Cullen, M.S. Fuhrer, and E.D. Williams Nano Lett. 7 2007 1643 1648
36. A.C. Ferrari, and J. Robertson Phys. Rev. B 64 2001 075414
37. C. Casiraghi, A.C. Ferrari, and J. Robertson Phys. Rev. B 72 2005 085401
38. A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S.K. Saha, U.V. Waghmare, K.S. Novoselov, H.R. Krishnamurthy, A.K. Geim, A.C. Ferrari, and A.K. Sood Nat. Nanotechnol. 3 2008 210 215
39. J.W. McPherson, J. Kim, A. Shanware, H. Mogul, and J. Rodriguez IEEE Trans. Electron Devices 50 2003 1771 1778
40. J.S. Kang, D.K. Schroder, and A.R. Alvarez Solid-State Electron. 32 1989 679 681
41. D.K. Schroder Semiconductor Material and Device Characterization 3 rd ed. 2006 John Wiley & Sons Hoboken, New Jersey
42. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243 5275
43. W.A. de Heer, C. Berger, X.S. Wu, M. Sprinkle, Y. Hu, M. Ruan, J.A. Stroscio, P.N. First, R. Haddon, B. Piot, C. Faugeras, M. Potemski, and J.S. Moon J. Phys. D: Appl. Phys. 43 2010 374007
44. S.M. Sze Semiconductor Devices: Physics and Technology 2nd ed. 2002 John Wiley & Sons Hoboken, New Jersey