Very high growth rate epitaxy processes with chlorine addition

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 157-160

  La Via, F ^a   Leone, S ^b   Mauceri, M ^b   Pistone, G ^b   Condorelli, G ^b   Abbondanza, G ^b   Portuese, F ^b   Galvagno, G ^a   Di Franco, S ^a   Calcagno, L ^c   Foti, G ^c   Valente, G L ^d   Crippa, D ^d  

^a CNR IMM   (Italy)

^b C o BIC Sicilia Pantano d'Arci   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d LPE   (Italy)

Author keywords

HCl; High growth rate; Homoepitaxial growth; Schottky diodes

Indexed keywords

CHLORINE; CHLORINE COMPOUNDS; EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

CHLORINE ADDITIONS; DEPOSITION CHAMBERS; ELECTRICAL CHARACTERISTIC; EPITAXIAL PROCESS; HIGH GROWTH RATE; HOMOEPITAXIAL GROWTH; SCHOTTKY DIODES; STRUCTURAL CHARACTERIZATION;

GROWTH RATE;

EID: 38449114670     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.157     Document Type: Conference Paper

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