A simulation model of resistive switching in electrochemical metallization memory cells

Materials Research Society Symposium Proceedings

Volumn 1160, Issue , 2009, Pages 101-106

  Menzel, S ^a,c   Klopstra, B ^a,c   Kugeler C ^b,c   Bottger U ^a,c   Staikov, G ^b,c   Waser, R ^a,b,c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c JARA Fundamentals of Future Information Technology   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUITY EQUATIONS; FEM MODELS; FEM SIMULATIONS; LEVEL SET METHOD; MEMORY CELL; METALLIZATIONS; MULTI-PHYSICS; NON-LINEARITY; PHYSICAL PROCESS; RESISTIVE SWITCHING; SET OPERATION; SIMULATION MODEL; SWITCHING TIME; SWITCHING VOLTAGES;

ELECTRIC PROPERTIES; ELECTROPHYSIOLOGY; FILAMENTS (LAMP); FINITE ELEMENT METHOD; LEVEL MEASUREMENT; METALLIZING; SEMICONDUCTOR STORAGE; SOLID ELECTROLYTES; SWITCHING SYSTEMS;

SWITCHING;

EID: 77649092372     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. R. Waser and M. Aono, Nature Materials, USA, 6 (2007) 833-840
2. C. Schindler, G. Staikov, R. Waser, Applied Physics Letters 94, (2009) 72109/1-3
3. M. N. Kozicki, C. Gopalan, M. Balakrishnan and M. Mitkova, IEEE Transactions on Nanotechnology, USA, 5 (2006) 535-44
4. C. Kuegeler, C Nauenheim, M. Meier, R. Ruediger and R. Waser, Proceedings of Non-volatile Memory Technology Symposium, (2008) 59-63
5. J. A. Sethian, Proc. Natl. Acad. Sci USA, Vol.93, pp. 1591-1595 (1996)