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Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

Scanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems

(5) Smoliner, J a Huber, H P b Hochleitner, M b Moertelmaier, M c Kienberger, F c

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b INSTITUTE FOR MICROELECTRONICS (Austria)

c Agilent Technologies Osterrreich GmbH (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; ANALYTICAL MODEL; CALIBRATION CONSTANTS; CARRIER PROFILING; EXPERIMENTAL PARAMETERS; METAL OXIDE SEMICONDUCTOR; MICROWAVE MICROSCOPY; OPERATION FREQUENCY; OPERATION PARAMETERS; OXIDE THICKNESS; TIP BIAS; TIP-SAMPLE INTERACTION;

CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; ELECTRONIC EQUIPMENT MANUFACTURE; MATHEMATICAL MODELS; MICROWAVE SPECTROSCOPY; PHOTOLITHOGRAPHY; SCANNING;

SEMICONDUCTOR JUNCTIONS;

EID: 77957724246 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3482065 Document Type: Article

Times cited : (32)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.