Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Honda, K ^a   Ishikawa, K ^b   Cho, Y ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MASS SPECTROMETRY; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

DENSITY VALUE; DOPANT CONCENTRATIONS; DOPANT PROFILE; HIGH RESOLUTION; PMOS TRANSISTORS; QUANTITATIVE AGREEMENT; SCANNING NONLINEAR DIELECTRIC MICROSCOPY; SRAM MEMORY CELLS;

DIELECTRIC DEVICES;

EID: 77950483831     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012050     Document Type: Conference Paper

References (11)

1. Zavyalov VV, McMurray JS and Williams CC 1999 J. Appl.Phys. 85 7774
2. De Wolf P, Clarysse T, Vandervorst W, Hellemans L, Niedermann Ph and Haenni W 1998 J. Vac. Sci. Technol. B 16 401
3. Volkl E and Lehmann M 1999 Introduction to Electron Holography ed Volkl E, Joy D and Allard L A (New York: Plenum)
4. Cho Y, Kirihara A and Saeki T 1996 Rev. Sci. Instrum. 67 2297
5. Cho Y, Kazuta S and Matsuura K 1999 Appl. Phys. Lett. 75 2833
6. Odagawa H and Cho Y, Funakubo H and Nagashima K 2000 Japan. J. Appl. Phys. 39 3808
7. Cho Y, Fujimoto K, Hiranaga Y, Wagatsuma Y, Onoe A, Terabe K and Kitamura K 2002 Appl. Phys. Lett. 81 4401
8. Hirose R, Ohara K and Cho Y 2007 Nanotechnology 18 S185
9. Honda K and Cho Y 2005 Appl. Phys. Lett. 86 013501
10. Honda K, Hashimoto S and Cho Y 2006 Nanotechnology 17 084014
11. Ishikawa K, Honda K and Cho Y 2007 Nanotechnology 18 084015