Tip geometry effects in scanning capacitance microscopy on GaAs Schottky and metal-oxide-semiconductor-type junctions

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Eckhardt, C ^a   Brezna, W ^a   Bethge, O ^a   Bertagnolli, E ^a   Smoliner, J ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION MEASUREMENTS; CONTACT AREAS; DOPING LEVELS; EXPERIMENTAL DATA; GAAS; METAL OXIDE SEMICONDUCTOR; OXIDE THICKNESS; QUANTITATIVE DETERMINATIONS; SCANNING CAPACITANCE MICROSCOPY; SCHOTTKY; SURFACE STATE; TIP GEOMETRY; TWO DIMENSIONAL MODEL;

ARSENIC COMPOUNDS; CAPACITANCE; COMPUTATIONAL GEOMETRY; DIELECTRIC DEVICES; ELECTRIC FIELDS; GALLIUM ALLOYS; METAL FOIL; SCANNING; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

SEMICONDUCTOR JUNCTIONS;

EID: 67649516578     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3140613     Document Type: Article

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