Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement

Microelectronics Reliability

Volumn 52, Issue 2, 2012, Pages 321-324

  Tan, C S ^a,b   Lim, D F ^a   Ang, X F ^c   Wei, J ^c   Leong, K C ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b RESEARCH TECHNO PLAZA   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING INTERFACES; CU SURFACES; IN-PLANE; IN-SITU; LOW TEMPERATURES; OUT-OF-PLANE; SAM LAYER; THERMO COMPRESSION BONDING; THIN LAYERS;

DESORPTION; GRAIN GROWTH; PARAFFINS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

WAFER BONDING;

EID: 84855876258     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.04.003     Document Type: Article

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