Void density reduction at the Cu-Cu bonding interface by means of prebonding surface passivation with self-assembled monolayer

Electrochemical and Solid-State Letters

Volumn 13, Issue 12, 2010, Pages

  Lim, D F ^a   Ang, X F ^b   Wei, J ^b   Ng, C M ^c   Tan, C S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL SAMPLES; CU BONDINGS; CU SURFACES; IN-SITU ANNEALING; INTERFACIAL VOIDS; PREBONDING; SCANNING ACOUSTIC MICROSCOPY; SURFACE PASSIVATION; THIN LAYERS; VOID DENSITY;

DESORPTION; PASSIVATION; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; WAFER BONDING;

SILICON WAFERS;

EID: 77958493117     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3487926     Document Type: Article

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