The effect of forming gas anneal on the oxygen content in bonded copper layer

Journal of Electronic Materials

Volumn 34, Issue 12, 2005, Pages 1598-1602

  Tan, C S ^a   Chen, K N ^b   Fan, A ^a   Reif, R ^a  

^a Massachusetts Institute of Technology   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Copper; Forming gas; Thermocompression bonding; Three dimensional integrated circuits (3 D ICs)

Indexed keywords

ANNEALING; SECONDARY ION MASS SPECTROMETRY; THERMOANALYSIS; WSI CIRCUITS;

FORMING GAS; THERMOCOMPRESSION BONDING; THREE DIMENSIONAL INTEGRATED CIRCUITS;

COPPER;

EID: 30144435952     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0171-9     Document Type: Conference Paper

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