Achieving low temperature Cu to Cu diffusion bonding with self assembly monolayer (SAM) passivation

2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Volumn , Issue , 2009, Pages

  Lim, Dau Fatt ^a   Singh, Shiv Govind ^a   Ang, Xiao Fang ^b   Wei, Jun ^b   Ng, Chee Mang ^c   Tan, Chuan Seng ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c Chartered Semiconductor Manufacturing Company   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT AIR; CU DIFFUSION; CU LAYERS; CU SURFACES; EXPOSURE TIME; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; IMMERSION TIME; LOW TEMPERATURES; LOW-TEMPERATURE DIFFUSION; PASSIVATION LAYER; SELF ASSEMBLY MONOLAYERS; SI WAFER; STABILITY OF SAM;

CONTACT ANGLE; DESORPTION; DIFFUSION; DIFFUSION BONDING; MONOLAYERS; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SULFUR COMPOUNDS; THREE DIMENSIONAL;

PASSIVATION;

EID: 70549099891     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2009.5306545     Document Type: Conference Paper

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