Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Crystal Growth and Design

Volumn 12, Issue 1, 2012, Pages 135-141

  Kim, Jung Hyuk ^a   Moon, So Ra ^a   Yoon, Hyun Sik ^a   Jung, Jae Hun ^a   Kim, Yong ^a   Chen, Zhi Gang ^b   Zou, Jin ^b   Choi, Duk Yong ^c   Joyce, Hannah J ^d   Gao, Qiang ^c   Tan, H Hoe ^c   Jagadish, Chennupati ^c  

^a Dong A University   (South Korea)

^b UNIVERSITY OF QUEENSLAND   (Australia)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOPARTICLE; AU SURFACES; DEFECT-FREE; EUTECTIC TEMPERATURE; GASEOUS SPECIES; GROWTH STEPS; HIGH TEMPERATURE; LATTICE-MISMATCHED; LOW-ACTIVATION ENERGY; NANOWIRE GROWTH; PRACTICAL IMPORTANCE; RATE-LIMITING STEPS; SI SUBSTRATES; SI(111) SUBSTRATE; TWO-TEMPERATURE;

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; GERMANIUM; GOLD COATINGS; GROWTH KINETICS; NANOPARTICLES; NANOWIRES; SILICON; SUBSTRATES;

GOLD;

EID: 84855365284     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg2008914     Document Type: Article

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