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Journal of the Electrochemical Society

Volumn 159, Issue 2, 2012, Pages

In situ spectroscopic ellipsometry study of plasma-enhanced ALD of Al 2O 3 on chromium substrates

(2) Foroughi Abari, Ali a Cadien, Kenneth C a

a UNIVERSITY OF ALBERTA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE THIN FILMS; ALUMINUM OXIDES; CHROMIUM OXIDES; DC MAGNETRON SPUTTERING; DEPOSITION TEMPERATURES; FTIR MEASUREMENTS; IN-SITU; INITIAL STAGES; INTERFACIAL OXIDE LAYERS; METAL INSULATOR METALS; METAL SURFACES; PLASMA PULSE; PROCESS PARAMETERS; REACTION CHAMBERS; THERMAL ALD; THIN LAYERS;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CHROMIUM; DEPOSITION; FILM GROWTH; METAL INSULATOR BOUNDARIES; MIM DEVICES; OXIDE FILMS; OXIDES; PLASMAS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS;

PLASMA DEPOSITION;

EID: 84855306517 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.035202jes Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.