Plasma-assisted atomic layer deposition of Al2O3 at room temperature

Plasma Processes and Polymers

Volumn 6, Issue SUPPL. 1, 2009, Pages

  Kääriäinen, Tommi O ^a   Cameron, David C ^a  

^a LAPPEENRANTA UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Aluminum oxide; ATR FTIR; Plasma enhanced chemical vapor deposition; Radicals

Indexed keywords

ALUMINUM OXIDES; ATR FTIR; ATR-FT-IR SPECTROSCOPY; CAPACITIVE COUPLINGS; DEPOSITION CHAMBERS; EDS ANALYSIS; EXCESS OXYGEN; GROWTH MECHANISMS; NEW DESIGN; OXYGEN GAS; PLASMA DISCHARGE; PLASMA POWER; PULSE LENGTH; PURGE GAS; RADICAL GENERATION; ROOM TEMPERATURE; SI (100) SUBSTRATE; SUBSTRATE SURFACE;

ALUMINUM; ALUMINUM COATINGS; ARGON; ATOMIC LAYER DEPOSITION; CARBON FILMS; ELECTRIC DISCHARGES; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROCARBONS; ION BOMBARDMENT; NITROGEN PLASMA; OXIDES; OXYGEN; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SUBSTRATES; THERMOANALYSIS;

PLASMA DIAGNOSTICS;

EID: 77952569324     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.200930605     Document Type: Conference Paper

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