-
1
-
-
0039438395
-
2O
-
2O," Appl. Phys. Lett., vol. 59, no. 3, pp. 283-285, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.3
, pp. 283-285
-
-
Ahn, J.1
Ting, W.2
Chu, T.3
Lin, S.4
Kwong, D.L.5
-
2
-
-
0031103926
-
Light nitrogen implant for preparing thin-gate oxides
-
Mar.
-
C. T. Liu, Y. Ma, J. Beceno, S. Nakahara, D. J. Eaglesham, and S. J. Hillenius, "Light nitrogen implant for preparing thin-gate oxides," IEEE Electron Device Lett., vol. 18, pp. 105-107, Mar. 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 105-107
-
-
Liu, C.T.1
Ma, Y.2
Beceno, J.3
Nakahara, S.4
Eaglesham, D.J.5
Hillenius, S.J.6
-
3
-
-
0000052518
-
Optimization of sub-3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient
-
K. Kumar, A. Chou, A. I. Chou, C. Lin, P. Chowdhury, J. C. Lee, and J. K. Lowell, "Optimization of sub-3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient," Appl. Phys. Lett., vol. 70, no. 3, pp. 384-386, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, Issue.3
, pp. 384-386
-
-
Kumar, K.1
Chou, A.2
Chou, A.I.3
Lin, C.4
Chowdhury, P.5
Lee, J.C.6
Lowell, J.K.7
-
4
-
-
0030212001
-
1.5 nm direct-tunneling gate oxide Si MOSFET's
-
Aug.
-
H. S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Saito, and H. Iwai, "1.5 nm direct-tunneling gate oxide Si MOSFET's," IEEE Trans. Electron Devices, vol. 43,. pp. 1233-1241, Aug. 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1233-1241
-
-
Momose, H.S.1
Ono, M.2
Yoshitomi, T.3
Ohguro, T.4
Nakamura, S.5
Saito, M.6
Iwai, H.7
-
5
-
-
0030387118
-
Gate oxide scaling limits and projection
-
C. Hu, "Gate oxide scaling limits and projection," in IEDM Tech. Dig., pp. 319-322, 1996.
-
(1996)
IEDM Tech. Dig.
, pp. 319-322
-
-
Hu, C.1
-
6
-
-
0029533419
-
Reducing operating voltage from 3.2, to 1 volt and below-challenges and guidelines for possible solutions
-
R.-H. Yan, D. Monroe, J. Weis, A. Mujtaba, and E. Westerwick, "Reducing operating voltage from 3.2, to 1 volt and below-challenges and guidelines for possible solutions," in IEDM Tech. Dig., 1995, pp. 55-58.
-
(1995)
IEDM Tech. Dig.
, pp. 55-58
-
-
Yan, R.-H.1
Monroe, D.2
Weis, J.3
Mujtaba, A.4
Westerwick, E.5
-
7
-
-
16744368810
-
High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V
-
T. Ohguro, M. Saito, E. Morifuji, K. Murakami, K. Malsuzaki, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V," in IEDM Tech. Dig., 1996, pp. 83-86.
-
(1996)
IEDM Tech. Dig.
, pp. 83-86
-
-
Ohguro, T.1
Saito, M.2
Morifuji, E.3
Murakami, K.4
Malsuzaki, K.5
Yoshitomi, T.6
Morimoto, T.7
Momose, H.S.8
Katsumata, Y.9
Iwai, H.10
-
8
-
-
0029490107
-
Highly-reliable gale oxide formation for giga-scale LSI's by using closed wet cleaning system and wet oxidation with ultra-dry unloading
-
J. Yugami, T. Itoga, and M. Ohkura, "Highly-reliable gale oxide formation for giga-scale LSI's by using closed wet cleaning system and wet oxidation with ultra-dry unloading," in IEDM Tech. Dig., 1995, pp. 855-858.
-
(1995)
IEDM Tech. Dig.
, pp. 855-858
-
-
Yugami, J.1
Itoga, T.2
Ohkura, M.3
-
9
-
-
0031236704
-
Thin oxides with in situ native oxide removal
-
Sept.
-
A. Chin, W. J. Chen, T. Chang, R. H. Kao, B. C. Lin, C. Tsai, and J. C.-M. Huang, "Thin oxides with in situ native oxide removal," IEEE Electron Device Lett., vol. 18, pp. 417-419, Sept. 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 417-419
-
-
Chin, A.1
Chen, W.J.2
Chang, T.3
Kao, R.H.4
Lin, B.C.5
Tsai, C.6
Huang, J.C.-M.7
-
10
-
-
0011343110
-
Dichlorosilane effects on low-temperature selective silicon epitaxy
-
J. C. Lou, C. Galewski, and W. G. Oldham, "Dichlorosilane effects on low-temperature selective silicon epitaxy," Appl. Phys. Lett., vol. 58, no. 1, pp. 59-61, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, Issue.1
, pp. 59-61
-
-
Lou, J.C.1
Galewski, C.2
Oldham, W.G.3
-
11
-
-
36549104118
-
Bistable conditions for low-temperature silicon epitaxy
-
B. S. Meyerson, F. J. Himpsel, and K. J. Uram, "Bistable conditions for low-temperature silicon epitaxy," Appl. Phys. Lett., vol. 57, no. 10, pp. 1034-1036, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.10
, pp. 1034-1036
-
-
Meyerson, B.S.1
Himpsel, F.J.2
Uram, K.J.3
-
12
-
-
0344592363
-
High quality epitaxial Si grown by a simple low-pressure chemical vapor deposition at 550 degrees C
-
A. Chin, B. C. Lin, and W. J. Chen, "High quality epitaxial Si grown by a simple low-pressure chemical vapor deposition at 550 degrees C," Appl. Phys. Lett., vol. 69, no. 11, pp. 1617-1620, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.11
, pp. 1617-1620
-
-
Chin, A.1
Lin, B.C.2
Chen, W.J.3
-
13
-
-
0030399672
-
Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current
-
S. I. Takagi, N. Yasuda, and A. Toriumi, "Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current," in IEDM Tech. Dig., 1996, pp. 323-326.
-
(1996)
IEDM Tech. Dig.
, pp. 323-326
-
-
Takagi, S.I.1
Yasuda, N.2
Toriumi, A.3
-
14
-
-
0028755085
-
Quasibreakdowni of ultrathin gate oxide under high field stress
-
S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, "Quasibreakdowni of ultrathin gate oxide under high field stress," in IEDM Tech. Dig., 1994, pp. 605-608.
-
(1994)
IEDM Tech. Dig.
, pp. 605-608
-
-
Lee, S.H.1
Cho, B.J.2
Kim, J.C.3
Choi, S.H.4
-
15
-
-
84886448024
-
Intrinsic and stress-induced traps in direct tunneling current of 2.3-3.8 nm oxides and unified characterization methodologies of sub-3 nm oxides
-
C. T. Liu, A. Ghetti, Y. Ma, O. Alers, C. P. Chang, K. P. Cheung, J. I. Colonell, W. Y. C. Lai, C. S. Pai, R. Liu, H. Vaidya, and J. T. Clemens, "Intrinsic and stress-induced traps in direct tunneling current of 2.3-3.8 nm oxides and unified characterization methodologies of sub-3 nm oxides," in IEDM Tech. Dig., 1997, pp. 85-88.
-
(1997)
IEDM Tech. Dig.
, pp. 85-88
-
-
Liu, C.T.1
Ghetti, A.2
Ma, Y.3
Alers, O.4
Chang, C.P.5
Cheung, K.P.6
Colonell, J.I.7
Lai, W.Y.C.8
Pai, C.S.9
Liu, R.10
Vaidya, H.11
Clemens, J.T.12
|