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Volumn 19, Issue 11, 1998, Pages 426-428

The effect of native oxide on thin gate oxide integrity

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; THIN FILMS;

EID: 0032204148     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728901     Document Type: Article
Times cited : (32)

References (15)
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    • R.-H. Yan, D. Monroe, J. Weis, A. Mujtaba, and E. Westerwick, "Reducing operating voltage from 3.2, to 1 volt and below-challenges and guidelines for possible solutions," in IEDM Tech. Dig., 1995, pp. 55-58.
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  • 8
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    • Highly-reliable gale oxide formation for giga-scale LSI's by using closed wet cleaning system and wet oxidation with ultra-dry unloading
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.