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Applied Physics Letters

Volumn 96, Issue 16, 2010, Pages

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

(7) Yamane, K a Hamaya, K a,b Ando, Y a Enomoto, Y a Yamamoto, K a Sadoh, T a Miyao, M a,b

a KYUSHU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; FERMI LEVEL PINNING; IV CHARACTERISTICS; LOW TEMPERATURES; RECTIFYING BEHAVIORS; SCHOTTKY BARRIER HEIGHTS; SI/GE;

DANGLING BONDS; DISTILLATION; ELECTRIC PROPERTIES; FERMIONS; GERMANIUM; SCHOTTKY BARRIER DIODES;

CONTACTS (FLUID MECHANICS);

EID: 77951786327 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3368701 Document Type: Article

Times cited : (78)

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