Role of impurities and dislocations for the unintentional n-type conductivity in InN

Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4476-4481

  Darakchieva, V ^a,b,c   Barradas, N P ^a,b   Xie, M Y ^c   Lorenz, K ^a,b   Alves, E ^a,b   Schubert, M ^d   Persson, P O A ^c   Giuliani, F ^c   Munnik, F ^e   Hsiao, C L ^c,f   Tu, L W ^f   Schaff, W J ^g  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^f NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^g Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; FILM SURFACES; FREE ELECTRON; FREE ELECTRON CONCENTRATION; FREE-ELECTRON DENSITY; H-DONORS; HIGH QUALITY; INN FILMS; N-TYPE CONDUCTIVITY; SURFACE ELECTRON ACCUMULATION;

CONDUCTIVE FILMS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

ELECTRONS;

EID: 71749113602     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.09.042     Document Type: Article

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