Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1124-1131

  Fichtenbaum, N A ^a   Mates, T E ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

A1. Impurities; A1. N polar; A3. Metalorganic chemical vapor deposition; Al. Polarity; B1. Nitrides

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

HYDROGEN IMPURITIES; VICINAL SAPPHIRE SUBSTRATES;

THIN FILMS;

EID: 39649083112     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.051     Document Type: Article

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