Free electron properties and hydrogen in InN grown by MOVPE

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 5, 2011, Pages 1179-1182

  Darakchieva, V ^a,b   Xie, M Y ^a,b   Rogalla, D ^c   Becker, H W ^c   Lorenz, K ^a   Alves, E ^a   Ruffenach, S ^d   Moret, M ^d   Briot, O ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b LINKÖPING UNIVERSITY   (Sweden)

^c RUHR UNIVERSITY BOCHUM   (Germany)

^d UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

free electron properties; hydrogen; InN; unintentional doping

Indexed keywords

COMPREHENSIVE STUDIES; DISLOCATION DENSITIES; FREE ELECTRON; FREE ELECTRON CONCENTRATION; HYDROGEN IMPURITY; INN; INN FILMS; MOVPE; N-TYPE DOPING; THERMAL-ANNEALING; UNINTENTIONAL DOPING;

HYDROGEN; SEMICONDUCTOR DOPING;

ELECTRONS;

EID: 79955888001     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001151     Document Type: Article

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