Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices

IEEE Transactions on Nuclear Science

Volumn 58, Issue 6 PART 1, 2011, Pages 2961-2967

  Zhang, En Xia ^a   Newaz, A K M ^b   Wang, Bin ^b   Bhandaru, Shweta ^a   Zhang, C Xuan ^a   Fleetwood, Daniel M ^a   Bolotin, Kirill I ^b   Pantelides, Sokrates T ^b   Alles, Michael L ^a   Schrimpf, Ronald D ^a   Weiss, Sharon M ^a   Reed, Robert A ^a   Weller, Robert A ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Graphene; Raman spectroscopy; total ionizing dose radiation

Indexed keywords

FIRST-PRINCIPLES CALCULATION; GRAPHENE LAYERS; INDUCED DEFECTS; LOW-ENERGY X-RAYS; NEGATIVE GATE; NEUTRAL POINTS; OXYGEN ADSORPTION; OZONE EXPOSURES; POSITIVE SHIFT; RADIATION-INDUCED; TOTAL DOSE; TOTAL IONIZING DOSE RADIATION; X RAY IRRADIATION;

BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; GAS ADSORPTION; IRRADIATION; OZONE; OZONE LAYER; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; X RAYS;

GRAPHENE;

EID: 83855162813     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2167519     Document Type: Conference Paper

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