Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 1925-1930

  Caussanel, M ^a   Canals, A ^b   Dixit, S K ^c   Beck, M J ^d   Touboul, A D ^e   Schrimpf, R D ^c   Fleetwood, D M ^c   Pantelides, S T ^d  

^a UNIVERSITÉ DE PERPIGNAN   (France)

^b TRAD   (France)

^c VANDERBILT UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e UNIV MONTPELLIER   (France)

Author keywords

Doping; Ion radiation effects; Ionization; Semiconductor junctions

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); HELIUM; ION BOMBARDMENT; IONIZATION; POSITIVE IONS; PROTONS; SEMICONDUCTOR JUNCTIONS; SILICON; X RAYS;

BULK TRAPPING; SILICON DIODES; SURFACE EFFECTS;

SEMICONDUCTOR DIODES;

EID: 37249018597     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.909021     Document Type: Conference Paper

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