Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene

Carbon

Volumn 49, Issue 12, 2011, Pages 3983-3988

  Wang, Bin ^a   Puzyrev, Yevgeniy ^a   Pantelides, Sokrates T ^a,b,c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON BOND; CLASSICAL MOLECULAR DYNAMICS; FIRST-PRINCIPLES CALCULATION; INHOMOGENEOUS STRAIN FIELDS; INTERSTITIALS; POLYCRYSTALLINE; SINGLE VACANCIES;

CALCULATIONS; DEFECTS; GRAIN BOUNDARIES; GRAPHENE; MOLECULAR DYNAMICS; POINT DEFECTS;

GRAIN SIZE AND SHAPE;

EID: 79960000432     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.05.038     Document Type: Article

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