The structural and electrical evolution of graphene by oxygen plasma-induced disorder

Nanotechnology

Volumn 20, Issue 37, 2009, Pages

  Kim, Dong Chul ^a   Jeon, Dae Young ^a   Chung, Hyun Jong ^a   Woo, Yunsung ^a   Shin, Jai Kwang ^a   Seo, Sunae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING EFFECTS; ELECTRICAL MEASUREMENT; EXPOSURE-TIME; GRADUAL CHANGES; GRANULAR STRUCTURESS; GRAPHENE LAYERS; GRAPHENES; LINEAR DECREASE; OXYGEN PLASMAS; PEAK POSITION; PERCOLATIVE CONDUCTION; PLANAR GRAPHENE; RAMAN SPECTRA;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; GRAPHITE; OXYGEN; PLASMAS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; TWO DIMENSIONAL;

PLASMA DIAGNOSTICS;

GRAPHENE; OXYGEN; GRAPHITE; NANOMATERIAL;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL STRUCTURE; ELECTRIC CONDUCTIVITY; OXIDATION; PRIORITY JOURNAL; RAMAN SPECTROMETRY; CHEMISTRY; ELECTROCHEMICAL ANALYSIS; METHODOLOGY; NANOTECHNOLOGY;

ELECTROCHEMICAL TECHNIQUES; GRAPHITE; MICROSCOPY, ATOMIC FORCE; NANOSTRUCTURES; NANOTECHNOLOGY; SPECTRUM ANALYSIS, RAMAN;

EID: 70349094097     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/37/375703     Document Type: Article

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