Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Childres, Isaac ^a   Jauregui, Luis A ^a   Tian, Jifa ^a   Chen, Yong P ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE DOMAINS; DIRAC POINT; EFFECT OF OXYGEN; ELECTRONIC TRANSPORT MEASUREMENTS; FIELD-EFFECT; FIELD-EFFECT DEVICES; HOLE-DOPING; INTENSITY RATIO; MAGNETO-TRANSPORT MEASUREMENT; OXYGEN PLASMAS; QUANTUM HALL STATE; SCATTERING LENGTH; SHORT PULSE; WEAK LOCALIZATION;

GALVANOMAGNETIC EFFECTS; HALL MOBILITY; OXYGEN; PLASMA ETCHING; PLASMAS; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

GRAPHENE;

EID: 79952275184     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/2/025008     Document Type: Article

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