Impact of native oxides beneath the gate contact of AlGaN/GaN HFET devices

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2627-2630

  Mistele, D ^a   Katz, O ^a   Horn, A ^a,b   Bahir, G ^a   Salzman, J ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT BARRIER HEIGHT; GATE CONTACT; SURFACE CHARGES SURFACE CHARGES;

ALUMINUM NITRIDE; ELECTRIC CHARGE; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 23944494923     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461380     Document Type: Conference Paper

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