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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 285-292

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

(6) Green, D S a Gibb, S R a Hosse, B a Vetury, R a Grider, D E a Smart, J A a

Author keywords

A1. Crystal structure; A1. Defects; A3. Organometallic VPE; B1. Nitrides; B2. Semiconducting III V mater; B3. High electron mobility transistors

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXY; PULSED BIAS POINT (PBP); QUIESCENT BIAS POINT (QBP); SEMICONDUCTING III-V MATER;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944224578 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.129 Document Type: Conference Paper

Times cited : (42)

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