Monte Carlo study of high-field electron transport characteristics in AlGaN/GaN heterostructure considering dislocation scattering

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2695-2699

  Tomita, Yoshihiro ^a   Ikegami, Hirofumi ^a   Fujishiro, Hiroki I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURE; DISLOCATION SCATTERING; ELECTRON TRANSPORT; ELECTRON VELOCITIES; HIGH FIELDS; MONTE CARLO SIMULATION; MONTE CARLO STUDY; NITRIDE SEMICONDUCTORS; SCREENING EFFECTS; THREADING DISLOCATION;

CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON GAS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; MONTE CARLO METHODS; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

ELECTRONS;

EID: 49749091156     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674768     Document Type: Conference Paper

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