High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Electronics Letters

Volumn 46, Issue 24, 2010, Pages 1626-1627

  Chen, W ^a   Zhou, C ^b   Chen, K J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BLOCKING CAPABILITY; CHANNEL POTENTIAL; CHANNEL RESISTANCE; HIGH BREAKDOWN VOLTAGE; HIGH CURRENT DENSITIES; HIGH-VOLTAGES; LOW DRAIN VOLTAGES; ON-CURRENTS; ON-RESISTANCE; SI SUBSTRATES;

ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS;

GALLIUM NITRIDE;

EID: 80053233873     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.1950     Document Type: Article

References (9)

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