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Volumn 10, Issue 4, 2009, Pages 171-174
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Light effects of the amorphous indium gallium zinc oxide thin-film transistor
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Author keywords
A igzo; Deep level defects; Oxide compound; Photosensitivity; TFT
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Indexed keywords
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EID: 84991987872
PISSN: 15980316
EISSN: 21581606
Source Type: Journal
DOI: 10.1080/15980316.2009.9652102 Document Type: Article |
Times cited : (26)
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References (8)
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