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Volumn 10, Issue 4, 2009, Pages 171-174

Light effects of the amorphous indium gallium zinc oxide thin-film transistor

Author keywords

A igzo; Deep level defects; Oxide compound; Photosensitivity; TFT

Indexed keywords


EID: 84991987872     PISSN: 15980316     EISSN: 21581606     Source Type: Journal    
DOI: 10.1080/15980316.2009.9652102     Document Type: Article
Times cited : (26)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.