Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors

Journal of the Society for Information Display

Volumn 18, Issue 10, 2010, Pages 796-801

  Hsieh, Hsing Hung ^a   Wu, Cheng Han ^a   Chien, Chih Wei ^a   Chen, Chang Ken ^a   Yang, Chao Shun ^a   Wu, Chung Chih ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Gate insulator; Indium gallium zinc oxide; Oxide semiconductors; Stability; Transport thin film transistor

Indexed keywords

BARRIER PROPERTIES; CONSTANT-CURRENT; DEFECT TRAPS; DEPOSITION CONDITIONS; DEVICE PERFORMANCE; FLOW RATIOS; GAS-FLOW RATIO; GATE INSULATOR; HIGH MOBILITY; HYDROGEN INCORPORATION; INDIUM GALLIUM ZINC OXIDE; LOW TEMPERATURES; OXIDE SEMICONDUCTOR; THRESHOLD-VOLTAGE SHIFT; TOP-GATE; TRANSPARENT THIN FILM TRANSISTOR;

AMORPHOUS FILMS; DEFECT DENSITY; GAS PERMEABLE MEMBRANES; HYDROGEN; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; STABILITY; STOICHIOMETRY; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77958195570     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID18.10.796     Document Type: Article

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