Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8736-8739

  Verma, Ved Prakash ^a   Kim, Do Hyun ^a,b   Jeon, Hoonha ^b   Jeon, Minhyon ^b   Choi, Wonbong ^a  

^a The Department of Electrical and Computer Engineering   (United States)

^b Inje University   (South Korea)

Author keywords

Electrical measurements and properties; Thin film transistor; X ray diffraction; Zinc oxide; Zinc oxide:metal

Indexed keywords

ANNEALING; GALLIUM; MAGNETRON SPUTTERING; OPTICAL DESIGN; OXIDES; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

ACTIVE CHANNELS; ELECTRICAL CHARACTERISTICS; ELECTRICAL MEASUREMENTS AND PROPERTIES; GA-DOPED; HIGH TRANSMITTANCE; HIGH VACUUM; RADIO-FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURES; THIN FILM TRANSISTOR; X-RAY DIFFRACTION; ZINC OXIDE THIN FILMS; ZINC OXIDE:METAL; ZNO THIN FILMS;

THIN FILM DEVICES;

EID: 50849090931     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.054     Document Type: Article

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