The influence of channel compositions on the electrical properties of solution-processed indium-zinc oxide thin-film transistors

IEEE/OSA Journal of Display Technology

Volumn 5, Issue 12, 2009, Pages 509-514

  Chen, Chang Ken ^a   Hsieh, Hsing Hung ^b   Shyue, Jing Jong ^c   Wu, Chung Chih ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

^c ACADEMIA SINICA   (Taiwan)

Author keywords

Channel compositions; Indium zinc oxide (IZO); Oxide semiconductors; Solution processing; Thin film transistors(TFT)

Indexed keywords

ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; HIGH TRANSPARENCY; INDIUM ZINC OXIDES; OXIDE SEMICONDUCTOR; PRECURSOR COMPOSITION; SOLUTION PROCESS; SOLUTION-PROCESSING;

AMORPHOUS FILMS; ELECTRIC PROPERTIES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC; ZINC OXIDE;

INDIUM;

EID: 70450213401     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2009.2024437     Document Type: Article

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