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Volumn 48, Issue 8 Part 2, 2009, Pages

Effect of heat treatment on electrical properties of amorphous oxide semiconductor In-Ga-Zn-O film as a function of oxygen flow rate

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; ANNEALING CONDITION; ANNEALING SYSTEMS; AS-DEPOSITED FILMS; ELECTRICAL PROPERTY; EXCELLENT PERFORMANCE; FIELD-EFFECT; N-CHANNEL; OXYGEN FLOW RATES; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSFER CHARACTERISTICS; VACUUM CONDITION; X RAY PHOTOEMISSION SPECTROSCOPY;

EID: 77952740283     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.08HK02     Document Type: Article
Times cited : (12)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.