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Volumn 48, Issue 8 Part 2, 2009, Pages

Effect of heat treatment on electrical properties of amorphous oxide semiconductor In-Ga-Zn-O film as a function of oxygen flow rate

(4) Jung, Chulho a Kim, Duckjin b Kang, Yong Kyu b Yoon, Dae Ho a,b

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; ANNEALING CONDITION; ANNEALING SYSTEMS; AS-DEPOSITED FILMS; ELECTRICAL PROPERTY; EXCELLENT PERFORMANCE; FIELD-EFFECT; N-CHANNEL; OXYGEN FLOW RATES; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; TRANSFER CHARACTERISTICS; VACUUM CONDITION; X RAY PHOTOEMISSION SPECTROSCOPY;

AMORPHOUS FILMS; BIOACTIVITY; CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; FIELD EFFECT TRANSISTORS; FURNACES; HEAT TREATING FURNACES; MAGNETRON SPUTTERING; OXYGEN; OXYGEN VACANCIES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; THIN FILM TRANSISTORS; VACUUM; VACUUM FURNACES; ZINC;

ELECTRIC PROPERTIES;

EID: 77952740283 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.08HK02 Document Type: Article

Times cited : (12)

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