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Volumn 48, Issue 8 Part 2, 2009, Pages
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Effect of heat treatment on electrical properties of amorphous oxide semiconductor In-Ga-Zn-O film as a function of oxygen flow rate
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS OXIDE SEMICONDUCTORS;
ANNEALING CONDITION;
ANNEALING SYSTEMS;
AS-DEPOSITED FILMS;
ELECTRICAL PROPERTY;
EXCELLENT PERFORMANCE;
FIELD-EFFECT;
N-CHANNEL;
OXYGEN FLOW RATES;
RADIO FREQUENCY MAGNETRON SPUTTERING;
ROOM TEMPERATURE;
TRANSFER CHARACTERISTICS;
VACUUM CONDITION;
X RAY PHOTOEMISSION SPECTROSCOPY;
AMORPHOUS FILMS;
BIOACTIVITY;
CARRIER CONCENTRATION;
EMISSION SPECTROSCOPY;
FIELD EFFECT TRANSISTORS;
FURNACES;
HEAT TREATING FURNACES;
MAGNETRON SPUTTERING;
OXYGEN;
OXYGEN VACANCIES;
RAPID THERMAL ANNEALING;
RAPID THERMAL PROCESSING;
THIN FILM TRANSISTORS;
VACUUM;
VACUUM FURNACES;
ZINC;
ELECTRIC PROPERTIES;
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EID: 77952740283
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.08HK02 Document Type: Article |
Times cited : (12)
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References (20)
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