Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 531-533

  Kobayashi, Kenkichiro ^a   Kohno, Yoshiumi ^a   Tomita, Yasumasa ^a   Maeda, Yasuhisa ^a   Matsushima, Shigenori ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b KITAKYUSHU NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous InGaZnO4 films; Codoping; Hole conductivit; Sputtering

Indexed keywords

ALN POWDER; AMORPHOUS INGAZNO4 FILMS; CO-DOPED; CO-DOPING; HOLE-CONDUCTIVIT; HOLE-DOPING; P-TYPE; RADIO FREQUENCIES; RF-SPUTTERING;

AMORPHOUS FILMS; DOPING (ADDITIVES);

FILM PREPARATION;

EID: 79951715622     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000442     Document Type: Article

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