Dual-gate characteristics of amorphous InGaZnO4 thin-film transistors as compared to those of hydrogenated amorphous silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2027-2033

  Takechi, Kazushige ^a   Nakata, Mitsuru ^a   Azuma, Kazufumi ^a   Yamaguchi, Hirotaka ^b   Kaneko, Setsuo ^b  

^a Technology Research Association for Advanced Display Materials (TRADIM)   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Amorphous silicon (a Si:H); Dual gate characteristics; Energy band bending; Fully depleted silicon on insulator (SOI); Hole accumulation; Oxide semiconductor; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON (A-SI:H); DUAL-GATE CHARACTERISTICS; ENERGY BAND BENDING; FULLY DEPLETED SILICON-ON-INSULATOR (SOI); HOLE ACCUMULATION; OXIDE SEMICONDUCTOR; THIN-FILM TRANSISTOR (TFT);

AMORPHOUS FILMS; BAND STRUCTURE; HYDROGENATION; MICROSENSORS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS SILICON;

EID: 69549091593     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026319     Document Type: Article

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