Electrical properties and stability of dual-gate coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistor

49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011

Volumn 3, Issue , 2011, Pages 1136-1139

  Baek, Gwanghyeon ^a   Kuo, Alex ^a   Kanicki, Jerzy ^a   Abe, Katsumi ^b   Kumomi, Hideya ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Cannon Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; GATE VOLTAGES; HOMOJUNCTION; INDIUM GALLIUM ZINC OXIDES (IGZO); NEGATIVE BIAS; POSITIVE BIAS TEMPERATURES; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE SHIFTS;

EXHIBITIONS; GALLIUM; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC;

ELECTRIC PROPERTIES;

EID: 82155195658     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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