SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 9, 2011, Pages

Exciton confinement in homo-and heteroepitaxial ZnO/Zn 1- xMgxO quantum wells with x < 0.1

(11) Laumer, Bernhard a,b Wassner, Thomas A a Schuster, Fabian a Stutzmann, Martin a Schörmann, Jörg b Rohnke, Marcus b Chernikov, Alexej c Bornwasser, Verena c Koch, Martin c Chatterjee, Sangam c Eickhoff, Martin b

a WALTER SCHOTTKY INSTITUT (Germany)

b JUSTUS LIEBIG UNIVERSITY (Germany)

c PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC BARRIERS; C-PLANE SAPPHIRE; CARRIER COOLING; CARRIER DYNAMICS; EXCITON CONFINEMENT; EXCITON LOCALIZATION; EXCITON-BINDING ENERGY; HETEROEPITAXIAL; HOMOEPITAXIAL; MG CONCENTRATIONS; MG INCORPORATION; NON-RADIATIVE RECOMBINATIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIATIVE RECOMBINATION; RESIDUAL CARRIER; SINGLE QUANTUM WELL STRUCTURES; THERMALLY ACTIVATED; WELL WIDTH; ZNO;

BINDING ENERGY; ELECTRIC FIELDS; EPITAXIAL GROWTH; EXCITONS; MOLECULAR BEAM EPITAXY; SAPPHIRE; STACKING FAULTS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 81355132367 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3658020 Document Type: Article

Times cited : (24)

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