Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate

Applied Surface Science

Volumn 257, Issue 17, 2011, Pages 7893-7899

  Zhang, Zhiyun ^a   Bao, Chonggao ^a   Ma, Shengqiang ^a   Hou, Shuzeng ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

AZO; Bi layer film; Defect density; GZO; HRTEM; Stacking faults

Indexed keywords

ALUMINA; ALUMINUM OXIDE; BISMUTH COMPOUNDS; BUFFER LAYERS; DEFECT DENSITY; GALLIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; PULSED LASER DEPOSITION; SAPPHIRE; STACKING FAULTS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

BI-LAYER FILMS; C-AXIS ORIENTATIONS; C-SAPPHIRE; CRYSTALLINITIES; GA-DOPED; HRTEM; ZNO BUFFER LAYER; ZNO FILMS;

ZINC OXIDE;

EID: 79957476562     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.070     Document Type: Article

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