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Applied Physics Letters

Volumn 98, Issue 13, 2011, Pages

Residual and nitrogen doping of homoepitaxial nonpolar m -plane ZnO films grown by molecular beam epitaxy

(7) Tanoff, D a Al Khalfioui, M a,b Deparis, C a Vinter, B a,b Teisseire, M a Morhain, C a Chauveau, J M a,b

a CNRS (France)

b UNIVERSITÉ CÔTE D'AZUR (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPENSATION MECHANISM; DOPED ZNO; HIGH PURITY; HIGH QUALITY; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; N-TYPE DOPING; NITROGEN-DOPING; NONPOLAR M-PLANE; P-TYPE DOPING; RESIDUAL DOPING; TEMPERATURE RANGE; ZNO; ZNO FILMS;

EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 79953753191 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3572025 Document Type: Article

Times cited : (50)

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