Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Shubina, T V ^a   Toropov, A A ^a   Lublinskaya, O G ^a   Kop'ev, P S ^a   Ivanov, S V ^a   El Shaer, A ^b   Al Suleiman, M ^b   Bakin, A ^b   Waag, A ^b   Voinilovich, A ^c   Lutsenko, E V ^c   Yablonskii, G P ^c   Bergman, J P ^d   Pozina, G ^d   Monemar, B ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; STIMULATED EMISSION; ZINC OXIDE;

BARRIER EMISSION BANDS; RECOMBINATION DYNAMICS; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 36249031463     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2812549     Document Type: Article

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