Microstructure and electrical properties of p-type phosphorus-doped ZnO films

Journal of Physics D: Applied Physics

Volumn 41, Issue 2, 2008, Pages

  Allenic, A ^a   Guo, W ^a   Chen, Y B ^a   Che, Y ^b   Hu, Z D ^b   Liu, B ^b   Pan, X Q ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b IMRA AMERICA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MICROSTRUCTURE; PHOSPHORUS; SUBSTRATES; ZINC OXIDE;

INTERSTITIAL DISLOCATION LOOPS; PARTIAL DISLOCATIONS; ZINC VACANCIES;

THIN FILMS;

EID: 38049075699     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/2/025103     Document Type: Article

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