Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Fadjie Djomkam, A B ^a   Ababou Girard, S ^a   Hiremath, R ^a   Herrier, C ^b   Fabre, B ^b   Solal, F ^a   Godet, C ^a,b  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; DEFECTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION; TUNNEL JUNCTIONS;

DENSITY DISTRIBUTIONS; EFFECTIVE BARRIER HEIGHTS; ELECTRICAL TRANSPORT; ELECTRICALLY ACTIVE DEFECTS; METAL-INSULATOR-SEMICONDUCTORS; RECTANGULAR TUNNEL; TEMPERATURE DEPENDENCE OF CURRENT; ULTRA-THIN METALS;

SEMICONDUCTOR JUNCTIONS;

EID: 80655132141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3651401     Document Type: Article

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