Effects of interface states on the non-stationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes

Journal of Physics D: Applied Physics

Volumn 32, Issue 1, 1999, Pages 64-71

  Gomila, G ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; ELECTRIC CONDUCTANCE; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MIS DEVICES; SCHOTTKY BARRIER DIODES;

CARRIER EXCHANGE; SCHOTTKY CONTACTS;

TUNNEL DIODES;

EID: 0033531026     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/1/011     Document Type: Article

References (23)

1. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
2. Roderick E H and Williams R H 1987 Metal-Semiconductor Contacts 2nd edn (New York: Oxford Science)
3. Henisch H K 1985 Semiconductor Contacts (Oxford: Oxford University Press)
4. Card H C and Roderick E H 1971 J. Phys. D: Appl. Phys. 4 1589
5. Burret C, Chekir F and Vapaille A 1983 J. Phys. C: Solid State Phys. 16 2421
6. Muret P and Deneuville A 1982 J. Appl. Phys. 53 6289
7. Werner J H 1989 Proc. NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces ed I P Batra (New York: Plenum)
8. Gomila G and Rubi J M 1997 J. Appl. Phys. 81 2674
9. Horváth Zs J 1994 Appl. Phys. Lett. 65 511
10. Werner J, Levi A F J, Tiud R T, Anzlowar M and Pinto M 1988 Phys. Rev. Lett. 60 53
11. Werner J, Ploog K and Queisser H J 1986 Phys. Rev. Lett. 57 1080
12. Shockley W and Read W T 1952 Phys. Rev. 87 835
13. Hall R N 1952 Phys. Rev. 87 387
14. sm on the insulating layer thickness as that in [4, 8, 15].
15. Wu C Y 1982 J. Appl. Phys. 53 5947
16. m.
17. Tseng H T and Wu C Y 1987 Solid State Electron. 30 383
18. Tseng H T and Wu C Y 1987 J. Appl. Phys. 61 299
19. In order to compare with published experimental results, the contribution of the series resistance has to be neglected, since our results have been derived under the assumption that series-resistance effects are negligible. These effects can easily be included, but they complicate the resulting expressions somewhat.
20. Muret P and Deneuville A 1986 Surf. Sci. 168 830
21. i ≪ 1.
22. van Vliet K M 1958 Phys. Rev. 110 50
23. Gomila G, Pérez-Madrid A and Rubí J M 1996 Physica A 233 208