Comparative measurements of highly irradiated n-in-p and p-in-n 3D silicon strip detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 659, Issue 1, 2011, Pages 272-281

  Köhler, Michael ^a   Bates, Richard ^b   Fleta, Celeste ^c   Jakobs, Karl ^a   Lozano, Manuel ^c   Parkes, Chris ^b   Parzefall, Ulrich ^a   Pellegrini, Giulio ^c   Preiss, Jens ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

3D detectors; High Luminosity LHC; Radiation hardness; Silicon tracking detectors

Indexed keywords

3-D-DETECTORS; 3D TECHNOLOGY; CHARGE COLLECTION EFFICIENCY; COMPARATIVE MEASUREMENTS; DEPLETION VOLTAGE; DEVICES UNDER TESTS; EQUIVALENT PARTICLE; FLUENCES; HIGH-LUMINOSITY LHC; PIXEL DETECTOR; PLANAR DETECTORS; RADIATION HARDNESS; SILICON STRIP DETECTORS; TRAPPING PROBABILITIES;

ELECTRIC FIELDS; HARDNESS; LUMINANCE; RADIATION DETECTORS; SILICON SENSORS; THREE DIMENSIONAL;

SILICON DETECTORS;

EID: 80455174618     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2011.08.041     Document Type: Article

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