Determination of effective trapping times for electrons and holes in irradiated silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 645-651

  Kramberger, G ^a   Cindro, V ^a   Mandi, I ^a   Mikuz M ^a   Zavrtanik, M ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Charge collection efficiency; Effective trapping time; LHC detectors; Silicon detectors

Indexed keywords

SILICON DIODES;

ANNEALING; ELECTRIC POTENTIAL; ELECTRON TRAPS; HOLE TRAPS; INDUCED CURRENTS; NEUTRON IRRADIATION; SEMICONDUCTOR DIODES; TRANSIENTS;

SEMICONDUCTING SILICON;

EID: 0037059428     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01653-9     Document Type: Conference Paper

References (8)