Micro-discharge at strip edge of silicon microstrip sensors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 383, Issue 1, 1996, Pages 116-122

  Ohsugi, T ^a   Iwata, Y ^a   Ohyama, H ^a   Ohmoto, T ^a   Yoshikawa, M ^a   Handa, T ^a   Kurino, K ^a   Fujita, K ^a   Tamura, N ^b   Hatakenaka, T ^b   Maeohmichi, M ^b   Takahata, M ^b   Nakao, M ^b   Asai, M ^c   Kimura, A ^c   Takashima, R ^d   Yamamoto, K ^e   Yamamura, K ^e  

^a HIROSHIMA UNIVERSITY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

^c HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

^d KYOTO UNIVERSITY OF EDUCATION   (Japan)

^e CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; LEAKAGE CURRENTS; MICROSTRIP DEVICES; NUMERICAL METHODS; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON SENSORS;

MICRODISCHARGE PHENOMENA; MICROSTRIP SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0030410155     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00690-0     Document Type: Article

References (13)

1. For example, H. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96; E. Fretwurst et al., ibid. p. 119.
2. For example, H. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96; E. Fretwurst et al., ibid. p. 119.
3. T. Ohsugi et al., Nucl. Instr. and Meth. A 342 (1994) 22.
4. E. Barberis et al., Nucl. Instr. and Meth. A 342 (1994) 90.
5. G. Batignani et al., Nucl. Instr. and Meth. A 315 (1992) 121.
6. M.P. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) p. 850.
7. T. Ohsugi et al., these Proceedings (2nd Int. Symp. on Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 1995) Nucl. Instr. and Meth. A 383 (1996) 166.
8. P. Holl et al. IEEE, Trans. Nucl. Sci. NS-36 (1989) 251.
9. N. Tamura et al., Nucl. Instr. and Meth. A 342 (1994) 131.
10. K. Niwa, private communication, Nagoya University print, in Japanese.
11. ox denotes oxide thickness. Studies over the range of oxide thickness from 100 to 1000 nm have been reported by Boesch and Taylor. A power law dependence with a exponent of 1.4 was observed. It is suggested that variation of strain at the interface with oxide thickness is the mechanism responsible for the interface-trap buildup. See, H.E. Boesch, Jr. and T.L. Taylor, IEEE Trans. Nucl. Sci. NS-31(6) (1984) 1273, and T.P. Ma and P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York, 1989) p. 228.
12. ox denotes oxide thickness. Studies over the range of oxide thickness from 100 to 1000 nm have been reported by Boesch and Taylor. A power law dependence with a exponent of 1.4 was observed. It is suggested that variation of strain at the interface with oxide thickness is the mechanism responsible for the interface-trap buildup. See, H.E. Boesch, Jr. and T.L. Taylor, IEEE Trans. Nucl. Sci. NS-31(6) (1984) 1273, and T.P. Ma and P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York, 1989) p. 228.
13. T. Ohsugi et al., Nucl. Instr. and Meth. A 342 (1994) 16.