Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 622, Issue 1, 2010, Pages 49-58

  Lange, J ^a   Becker, J ^a   Fretwurst, E ^a   Klanner, R ^a   Lindstrm, G ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Charge multiplication; Epitaxial silicon detectors; Impact ionisation; Radiation damage; SLHC; Trapping

Indexed keywords

CHARGE MULTIPLICATION; EPITAXIAL SILICON; IONISATION; SLHC; TRAPPING;

DIODES; IMPACT IONIZATION; NEUTRON IRRADIATION; PROTON IRRADIATION; RADIATION DAMAGE; RADIATION DETECTORS; SIGNAL TO NOISE RATIO; SILICON DETECTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956490324     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.07.036     Document Type: Article

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