Annealing effects in n+-p strip detectors irradiated with high neutron fluences

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 629, Issue 1, 2011, Pages 101-105

  Mandić, Igor ^a   Cindro, Vladimir ^a   Kramberger, Gregor ^a   Mikuž, Marko ^a,b  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Micro strip detectors; p Type silicon; Radiation hardness; Super LHC

Indexed keywords

ANNEALING EFFECTS; ANNEALING TIME; CHARGE COLLECTION PROPERTIES; CHARGE MULTIPLICATION; FAST ELECTRONS; FLUENCES; HIGH VOLTAGE; MICRO-STRIP DETECTORS; NEUTRON FLUENCES; P-N JUNCTION; P-TYPE SILICON; RADIATION HARDNESS; REACTOR NEUTRONS; REVERSE ANNEALING; SPACE CHARGES; STRIP DETECTORS; SUPER LHC;

ANNEALING; BIAS VOLTAGE; ELECTRIC FIELDS; HARDNESS; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 79251622962     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.11.057     Document Type: Article

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