Evidence of enhanced signal response at high bias voltages in planar silicon detectors irradiated up to 2.2×1016 neq cm-2

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 636, Issue 1 SUPPL., 2011, Pages

  Casse, Gianluigi ^a   Affolder, A ^a   Allport, P P ^a   Brown, H ^a   McLeod, I ^a   Wormald, M ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Charge collection efficiency; Radiation hardness; Silicon detectors; sLHC

Indexed keywords

ANALOGUE ELECTRONICS; CHARGE COLLECTION EFFICIENCY; CLOCK SPEED; FLUENCES; IRRADIATED SENSORS; PLANAR SILICON DETECTOR; RADIATION HARDNESS; RADIATION INDUCED DEFECTS; SIGNAL RESPONSE; SLHC;

RADIATION DETECTORS; SENSORS; SILICON DETECTORS;

BIAS VOLTAGE;

EID: 79251596544     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.04.085     Document Type: Conference Paper

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