Investigation of irradiated silicon detectors by edge-TCT

IEEE Transactions on Nuclear Science

Volumn 57, Issue 4 PART 2, 2010, Pages 2294-2302

  Kramberger, G ^a   Cindro, V ^a   Mandic I ^a   Mikuz M ^a   Milovanovic M ^a   Zavrtanik, M ^a   Zagar K ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Charge collection efficiency; charge multiplication; charge trapping; irradiation; silicon strip detectors

Indexed keywords

BEAM DIAMETERS; BEAM POSITIONS; CARRIER GENERATION; CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY; CHARGE MULTIPLICATION; DRIFT VELOCITIES; ELECTRIC FIELD PROFILES; ELECTRON HOLE PAIRS; FLUENCES; HIGH VOLTAGE; INDUCED CURRENT PULSE; IR LASERS; IRRADIATED SILICON DETECTORS; P-TYPE SILICON; PULSE SHAPES; PULSE WIDTH; SILICON STRIP DETECTORS; TRANSIENT CURRENT TECHNIQUE;

CHARGE TRAPPING; DETECTORS; ELECTRIC FIELDS; IRRADIATION; PULSED LASER APPLICATIONS; SILICON SENSORS;

SILICON DETECTORS;

EID: 77955795715     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2051957     Document Type: Article

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