Observation of full charge collection efficiency in heavily irradiated n+p strip detectors irradiated up to 3×1015 neq/cm2

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 612, Issue 3, 2010, Pages 474-477

  Mandić, Igor ^a   Cindro, Vladimir ^a   Gorišek, Andrej ^a   Kramberger, Gregor ^a   Mikuž, Marko ^a,b   Zavrtanik, Marko ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Microstrip detectors; P type silicon; Radiation Hardness; Super LHC

Indexed keywords

BULK SILICON; CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY; FAST ELECTRONS; FORWARD BIAS; FORWARD VOLTAGE; IRRADIATED DETECTORS; IRRADIATED SILICON DETECTORS; MICRO-STRIP DETECTORS; MODE OF OPERATIONS; P-TYPE; P-TYPE SILICON; RADIATION HARDNESS; REACTOR NEUTRONS; REVERSE BIAS VOLTAGE; STRIP DETECTORS; SUPER LHC;

HARDNESS; RADIATION DETECTORS;

SILICON DETECTORS;

EID: 73649116362     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.08.004     Document Type: Article

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